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APT5010B2LC - Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

APT5010B2LC_42219.PDF Datasheet

Part No.

APT5010B2LC APT5010LLC

Description

Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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Full text search : Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Related Part Number

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APT6032AVR	POWER MOS V 600V 17.5A 0.320 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW[Advanced Power Technology]
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APT1001R1HVR	POWER MOS V 1000V 9A 1.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW[Advanced Power Technology]
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APT8030JVFR	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW[Advanced Power Technology]
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APT8030LVR	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW[Advanced Power Technology]
APT4016BVR	POWER MOS V 400V 27A 0.160 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	Advanced Power Technology
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